ARW: Efficient Replacement Policies for Phase Change Memory and NAND Flash

An Efficient Dynamic Hash Index Structure for NAND Flash Memory

We propose an efficient dynamic hash index structure suitable for a NAND flash memory environment. Since write operations incur significant overhead in NAND flash memory, our design of index structure focuses on minimizing the number of write operations for hash index updates. Through a set of extensive experiments, we show the effectiveness of the proposed hash index structure in a NAND flash ...

Dynamic Forest: An Efficient Index Structure for NAND Flash Memory

In this paper, we present an efficient index structure for NAND flash memory, called the Dynamic Forest (D-Forest). Since write operations incur high overhead on NAND flash memory, D-Forest is designed to minimize write operations for index updates. The experimental results show that D-Forest significantly reduces write operations compared to the conventional B+-tree. key words: NAND flash memo...

Polar-Coded Forward Error Correction for MLC NAND Flash Memory Polar FEC for NAND Flash Memory

With the ever-growing storage density, high-speed, and low-cost data access, flash memory has inevitably become popular. Multi-level cell (MLC) NAND flash memory, which can well balance the data density and memory stability, has occupied the largest market share of flash memory. With the aggressive memory scaling, however, the reliability decays sharply owing to multiple interferences. Therefor...

The efficient recovery of deleted data from NAND flash memory

NAND Flash Memory MT29F2G08AACWP, MT29F4G08BACWP, MT29F8G08FACWP

Features • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Page size x16: 1,056 words (1,024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks • READ performance – Random READ: 25μs – Sequential READ: 30ns (3V x8 only) • WRITE performance – PROGRAM PAGE: 300μs (TYP) – BLOCK ERASE: 2ms (TYP) • Endurance: 100,...